13 after favorable response to rohm's low vf series, we will lead the market for ultra high speed rectifier diodes. our new diodes will be low loss and have low vf and ultra high speed frd. low loss. (soft recovery) switching speed (10nsec typ.) low vf (1.10v typ.) 2.5 0.2 2.6 4.5 3.0 0.2 2.0 type.(taping) 1sr159-400 1sr159-200 1SR159-600 1sr164-400 pmds (4526) pmds (4526) pmds (4526) msr 1a/400v 1a/200v 1a/600v 1a/400v 1.10v typ (1.0a) 10 nsec typ. 1.10v typ (1.0a) 10 nsec typ. package i o /vrm v f (at if) mass production is available under development trr(0.5/1.0a) dimension unit: mm4.5 2.6(11.70mm 2 ) height: 2.0 mm pmds msr 10000 1000 100 10 1 0.1 0.0 0.5 1.0 if(ma) vf(v) vf-if 1.5 2.0 ta=150 c ta=75 c ta=25 c ta= 25 c current(a) time(nsec) 0.00000 50 000 switching wave competitors 1sr159-400 1sr164-400
14 ultra first recovery diode (silicon epitaxial planer) 1sr159-400 application high-speed switching feature small power mold type(pmds) low vf high-speed switchig, soft recovery low switching loss mass per piece 69mg/pcs absolute maximum rating (ta=25 c) dimension (unit:mm) characteristic symbol limits reverse voltage(repetitive peak) reverse voltage(dc) average rectified forward current forward current surge peak(60hz1 ) junction temperature storage temperature vrsm vrm i o ifsm tj tstg 400v 400v 1a 20a 150 c 40 150 c electrical characteristc (ta=25 c) characteristic forward current reverse current switching time symbol vf ir trr test condition if=1.0a vr=400v if=0.5a ir=1.0a irr=0.25*ir standard 1050mv 0.7 a 10nsec maximum 1200mv 10 a 25nsec *please pay attention to static electricity when handring. characteristic symbol limits reverse voltage(repetitive peak) reverse voltage(dc) average rectified forward current forward current surge peak(60hz1 ) junction temperature storage temperature vrsm vrm i o ifsm tj tstg 400v 400v 1a 20a 150 c 40 150 c characteristic forward current reverse current switching time symbol vf ir trr test condition if=1.0a vr=400v if=0.5a ir=1.0a irr=0.25*ir standard 1050mv 0.7 a 10nsec maximum 1200mv 10 a 25nsec *please pay attention to static electricity when handring. 1.5 0.2 cathode mark 2.6 0.2 2.0 0.2 4.5 0.2 5.0 0.3 1 2 3 4 0.1 0.02 0.1 1.2 0.3 ultra first recovery diode (silicon epitaxial planer) 1sr164-400 application high-speed switching feature mold type(msr) low vf high-speed switchig, soft recovery low switching loss mass per piece 190mg/pcs 29 1 29 1 3.0 0.2 3 2 1 2.5 0.2 0.6 0.1 cathode mark low loss low loss absolute maximum rating (ta=25 c) dimension (unit:mm) electrical characteristc (ta=25 c)
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